2n3117 npn silicon transistor description: the central semiconductor 2n3117 type is an npn silicon transistor designed for general purpose amplifier applications. marking: full part number to-18 case maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 60 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 6.0 v continuous collector current i c 50 ma power dissipation p d 360 mw operating and storage junction temperature t j, t stg -65 to +200 c electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min max units i cbo v cb =45v 10 na i cbo v cb =45v, t a =150c 10 a i ebo v eb =5.0v 10 na bv cbo i c =10a 60 v bv ceo i c =10ma 60 v bv ebo i e =10a 6.0 v v ce(sat) i c =1.0ma, i b =100a 0.35 v v be(on) v ce =5.0v, i c =100a 0.7 v h fe v ce =5.0v, i c =1.0a 100 h fe v ce =5.0v, i c =10a 250 500 h fe v ce =5.0v, i c =10a, t a =-55c 50 h fe v ce =5.0v, i c =100a 300 h fe v ce =5.0v, i c =1.0ma 400 h fe v ce =5.0v, i c =0.5ma, f=30mhz 2.0 c ob v cb =5.0v, i e =0 4.5 pf c ib v eb =0.5v, i c =0 6.0 pf nf v ce =5.0v, i c =5.0a, f=10khz bw=1.0khz, r s =50k 1.0 db r0 (4-september 2012) www.centralsemi.com
2n3117 npn silicon transistor lead code: 1) emitter 2) base 3) collector marking: full part number to-18 case - mechanical outline www.centralsemi.com r0 (4-september 2012)
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